Publication
(142) (Corresponding) “Self-selective crossbar synapse array with n-ZnO/p-NiOx/n-ZnO structure for neuromorphic computing”, Peter Hayoung Chung, Jiyeon Ryu, Daejae Seo, Dwipak Prasad Sahu, Minju Song, Junghwan Kim, and Tae-Sik Yoon*, Advanced Electronic Materials, 2400347 (2024).
(141) (Corresponding) “Forming-free, low-voltage, and high-speed resistive switching in Ag/oxygen-deficient vanadium oxide(VOx)/Pt device through tow-step resistance change by Ag filament formation”, Jiyeon Ryu, Kitae Park, Dwipak Prasad Sahu, and Tae-Sik Yoon*, ACS Applied Materials & Interfaces 16, 26450 (2024).
(140) (Corresponding) “Enhanced linear and symmetric synaptic weight update characteristics in a Pt/p-LiCoOx/p-NiO/Pt memristor through interface energy barrier modulation by Li ion redistribution”, Boyoung Jeong, Peter Hayoung Chung, Jimin Han, Taeyun Noh, and Tae-Sik Yoon*, Nanoscale, 16, 5737 (2024).
(139) (Co-corresponding) “Nanoscale vertical resolution in optical printing of inorganic nanoparticles”, Seongheon Beak, Sanggyun Jeong, Hyeong Woo Ban, Jiyeon Ryu, Yoonkyum Kim, Da Hwi Gu, Changil Son, Tae-Sik Yoon*, Jiseok Lee*, Jae Sung Son*, ACS Nano, 17, 24268 (2023).
(138) (Corresponding) “Tunable voltage polarity-dependent resistive switching characteristics by interface energy barrier modulation in ceria-based bilayer memristors for neuromorphic computing”, Sola Moon, Kitae Park, Peter Hayoung Chung, Dwipak Prasad Sahu, Tae-Sik Yoon*, Journal of Alloys and Compounds, 963, 171211 (2023).
(137) (Corresponding) “Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfOx bilayer memristive device for neuromorphic computing”, Dwipak Prasad Sahu, Kitae Park, Peter Hayoung Chung, Jimin Han, Tae-Sik Yoon*, Scientific Reports, 13, 9592 (2023).
(136) (Corresponding) “Write-once-read-many-times memory characteristics with a large memory window operating at a low voltage by Li-ion incorporation from the LiCoOx ion-supplying layer into the InGaZnO channel of a thin-film transistor”, Boyoung Jeong, Jimin Han, Taeyun Noh, Tae-Sik Yoon*, ACS Applied Electronic Materials, 5, 3470 (2023).
(135) (Corresponding) “Non-volatile charge-trap memory characteristics with low-temperature atomic layer deposited HfO2-x charge-trap layer and interfacial tunneling oxide formed by UV/ozone treatment”, Jimin Han, Boyoung Jeong, Dwipak Prasad Sahu, Hyun-Mi Kim, Tae-Sik Yoon*, Journal of Alloys and Compounds, 951, 169858 (2023).
(134) (Corresponding) “Tunable multilevel gate oxide capacitance and flat-band voltage shift characteristics by filament formation in double-floating-gate metal-oxide-semiconductor capacitors”, Jimin Han, Kitae Park, Hyun-Mi Kim, Tae-Sik Yoon*, Advanced Electronic Materials, 9, 2201110 (2023) (Cover Image).
(133) (Corresponding) “Electroforming-free threshold switching of NbOx–based selector devices by controlling conducting phases in NbOx layer for the application to crossbar array architectures”, Kitae Park, Jiyeon Ryu, Dwipak Prasad Sahu, Hyun-Mi Kim, Tae-Sik Yoon*, RSC Advances, 12, 18547 (2022).
(132) (Corresponding) “Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide”, Jimin Han, Boyoung Jeong, Yuri Kim, Joonki Suh, Hongsik Jeong, Hyun-Mi Kim, Tae-Sik Yoon*, Materials Today Advances, 15, 100264 (2022).
(131) (Corresponding) “Improvement of forming-free threshold switching reliability of CeO2-based selector device by controlling volatile filament formation behaviors”, Dwipak Prasad Sahu, Kitae Park, Jimin Han, Tae-Sik Yoon*, APL Materials, 10, 051111 (2022).
(130) (Corresponding) “Interface state-dependent synaptic characteristics of Pt/CeO2/Pt memristors controlled by post-deposition annealing”, Kitae Park, Peter Hayoung Chung, Dwipak Prasad Sahu, Tae-Sik Yoon*, Materials Science in Semiconductor Processing, 147, 106718 (2022).
(129) “Enhancement of electrochromic response and cyclic durability of WO3 thin films by stacking Nb2O5 layers”, Yong Jun Park, Kwang-Mo Kang, Ji Ho Kang, Seung Ho Han, Ho Seong Jang, Ja Yeon Lee, Tae-Sik Yoon, Yoon-Chae Nah, Dong Hun Kim, Applied Surface Science, 585, 152431 (2022).
(128) (Corresponding) “Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application”, Keonwon Beom, Jimin Han, Hyun-Mi Kim, and Tae-Sik Yoon*, Nanoscale 13, 11370 (2021).
(127) “Analog memristive characteristics of square shaped lanthanum oxide nanoplates layered device”, Wonkyu Kang, Kyoungmin Woo, Hyon Bin Na, Chi Jung Kang, Tae-Sik Yoon, Kyung Min Kim, and Hyun Ho Lee, Nanomaterials, 11, 441 (2021).
(126) “Enhanced photodetector performance in gold nanoparticle decorated ZnO microrods”, HanJin Lee, Jeong Heum Mun, InHyeok Oh, Keonwon Beom, Tae-Sik Yoon, A-Ra Hong, Ho Seong Jang, Dong Hun Kim, Materials Characterization, 171, 110813 (2021).
(125) “Strain-Induced Photocurrent Enhancement in Photodetectors Based on Nanometer-Thick ZnO Films on Flexible Polydimethylsiloxane Substrates”, Jeong Heum Mun, HanJin Lee, Sun Hee Lee, Tae-Sik Yoon, Seung Ho Han, Dong Hun Kim, ACS Applied Nano Materials, 3, 10922 (2020).
(124) “Effect of Bilayer Period of Atomic Layer Deposition on the Growth Behavior and Electrical Properties of Amorphous In-Zn-O Film”, Sangbong Lee, Yun-Ho Kang, Min-Sik Kim, Hyerin Lee, Yeong-Ho Cho, Minsu Kim, Tae-Sik Yoon, Hyun-Mi Kim, Ki-Bum Kim, ACS Applied Materials & Interfaces 12, 39372 (2020).
(123) (Corresponding) "Nonvolatile memory and artificial synaptic characteristics in thin-film transistors with atomic layer deposited HfOx gate insulator and ZnO channel layer", Hyerin Lee, Keonwon Beom, Minju Kim, Chi Jung Kang and Tae-Sik Yoon*, Advanced Electronic Materials, 2000412 (2020).
(122) "Enhanced brightness and device lifetime of quantum dot light-emitting diodes by atomic layer deposition", Gi-Hwan kim, Kyeongchan Noh, Jisu Han, Minsu Kim, Nuri Oh, Woongkyu Lee, Hyon Bin Na, Chansun Shin, Tae-Sik Yoon, Jaehoon Lim, Seong-Yong Cho, Advanced Materials Interfaces, 2000343 (2020).
(121) "CsPbBr3 perovskite quantum dot light-emitting diodes using atomic layer deposited Al2O3 and ZnO interlayers", Hwang-Sik Yun, Kyeongchan Noh, Jigeon Kim, Sung Hoon Noh, Gi-Hwan Kim, Woongkyu Lee, Hyon Bin Na, Tae-Sik Yoon, Jaeyoung Jang, Younghoon Kim, Seong-Yong Cho, Physica Status Solidi(RRL)-Rapid Research Letters, 14, 1900573 (2020).
(120) "Facile synthesis of ZnO microrod photodetectors by solid-state reaction", HanJin Lee, Hyun Kyu Jung, Young Eun Kim, Keonwon Beom, Jeong Heum Mun, A-Ra Hong, Ho Seong Jang, Jong-Sung Park, Tae-Sik Yoon, Dong Hun Kim, Journal of Alloys and Compounds, 825, 154110 (2020).
(119) "Compliance current-controlled conducting filament formation in tantalum oxide-based RRAM devices with different top electrodes", Tae Sung Lee, Nam joo Lee, Haider Abbas, Hyun Ho Lee, Tae-Sik Yoon, and Chi Jung Kang, ACS Applied Electronic Materials. 2, 1154 (2020).
(118) "Enhancement of cortisol measurement sensitivity by laser illumination for AlGaN/GaN transistor biosensor", Kyoungmin Woo, Wonkyu Kang, Kyungmin Lee, Pilwoo Lee, Yoonjae Kim, Tae-Sik Yoon, Chu-Young Cho, Kyung-Ho Park, Min-Woo Ha, Hyun Ho Lee, Biosensors and Bioelectronics, 159, 112186 (2020).
(117) (Corresponding) "Post-annealing temperature-dependent electrical properties of thin-film transistors with ZnO channel and HfOx gate insulator deposited by atomic layer deposition", Hyerin Lee, Keonwon Beom, Minju Kim, and Tae-Sik Yoon*, Semiconductor Science and Technology, 35, 075013 (2020).
(116) (Corresponding) "Effect of nitrogen-doping on drain current modulation characteristics of an indium-gallium-zinc oxide thin-film transistor", Keonwon Beom, Minju Kim, Hyerin Lee, Hyung Jun Kim, Seong-Yong Cho, Hyun Ho Lee, Chi Jung Kang, and Tae-Sik Yoon*, Nanotechnology, 31, 265201 (2020).
(115) (Corresponding) "Nonvolatile reversible capacitance changes through filament formation in a floating-gate metal-oxide-semiconductor capacitor with Ag/CeO2/Pt/HfOx/n-Si structure", Minju Kim, Keonwon Beom, Hyerin Lee, Chi Jung Kang, and Tae-Sik Yoon*, Applied Physics Letters, 115, 072106 (2019).
(114) (Corresponding) "A Pt/ITO/CeO2/Pt memristor with an analog, linear, symmetric, and long-term stable synaptic weight modulation", Hyung Jun Kim, Minju Kim, Keonwon Beom, Hyerin Lee, Chi Jung Kang, and Tae-Sik Yoon*, APL Materials, 7, 071113 (2019).[Invited paper, Cover page, Featured article].
(113) "Effect of ethanolamine passivation of ZnO nanoparticles in qunatum dot light emitting diode structure", Kyeongchan Noh, Minsu Kim, Sang-Hyun Lee, Hwang-Sik Yun, Tae-Hyeon Lim, Yeongho Choi, Ki-Ju Kim, Yiran Jiang, Keonwon Beom, Minju Kim, Young-Gwang kim, Pilwoo Lee, Nuri Oh, Bong Hoon Kim, Chansun Shin, Hyun Ho Lee, Tae-Sik Yoon, Moonsub Shim, Jaehoon Lim, Ki-Bum Kim, Seong-Yong Cho, Current Applied Physics, 19, 998 (2019).
(112) "Resistive switching characteristics of ZnO nanoparticles layer-by-layer assembly based on cortisol and its antibody immune binding", Hunsang Jung, Jihee Jung, Dahye Kwon, Kyungmin Lee, Pilwoo Lee, Wonkyu Kang, Tae-Sik Yoon, Chi Jung Kang, and Hyun Ho Lee, Journal of Industrial and Engineering Chemistry, 78, 66 (2019).
(111) "Effects of gamma irradiation on the electrical characteristics of trench-gate non-punch-through insulated gate bipolar transistor", Hani Baek, Tae-Sik Yoon, Gwang Min Sun, Chansun Shin, Semiconductor Science and Technology, 34, 065022 (2019).
(110) "Forming-free resistive switching characteristics in manganese oxide and hafnium oxide devices", Quanli Hu, Haider Abbas, Tae Su Kang, Tae Sung Lee, Nam Joo Lee, Mi Ra Park, Tae-Sik Yoon, Jaewan Kim, Chi Jung Kang, Japanese Journal of Applied Physics, 58, 044001 (2019).
(109) “Reversible transition of volatile to non-volatile resistive switching and compliance current-dependent multistate switching in IGZO/MnO RRAM devices”, Haider Abbas, Asif Ali, Jongwan Jung, Quanli Hu, Mi Ra Park, Hyun Ho Lee, Tae-Sik Yoon, Chi Jung Kang, Applied Physics Letters, 114, 093503(2019).
(108) (Corresponding) "Reversible capacitance changes in the MOS capacitor with an ITO/CeO2/p-Si structure", Daehoon Park, Minju Kim, Keonwon Beom, Seong-Yong Cho, Chi Jung Kang, and Tae-Sik Yoon*, Journal of Alloys and Compounds, 786, 655 (2019).
(107) (Corresponding) "Single- and double-gate synaptic transistor with TaOx gate insulator and IGZO semiconductor channel layer", Keonwon Beom, Paul Yang, Daehoon Park, Hyung Jun Kim, Hyun Ho Lee, Chi Jung Kang, and Tae-Sik Yoon*, Nanotechnology, 30, 025203 (2019).
(106) (Corresponding) "Analog, reversible, and nonvolatile memcapacitance in Si-based MOS memcapacitor with an ITO/HfOx/Si structure", Daehoon Park, Paul Yang, Hyung Jun Kim, Keonwon Beom, Chi Jung Kang, and Tae-Sik Yoon*, Applied Physics Letters,113, 162102 (2018).
(105) “Multistate resistive switching characteristics of ZnO nanoparticles embedded polyvinylphenol device”, Jihee Jung, Dahye Kwon, Hunsang Jung, Kyungmin Lee, Tae-Sik Yoon, Chi Jung Kang, Hyun Ho Lee, Journal of Industrial and Engineering Chemistry, 64, 85 (2018).
(104) “Tri-state resistive switching characteristics of MnO/Ta2O5 RRAM device by controllable reset process”, Nam Joo Lee, Tae Su Kang, Quanli Hu, Tae Sung Lee, Tae-Sik Yoon, Hyun Ho Lee, Eunji Yoo, Young Jin Choi, Chi Jung Kang, Journal of Physics D: Applied Physics, 51, 225102 (2018).
(103) [Corresponding] “Synaptic behaviors of thin-film transistor with a Pt/HfOx/n-type indium-gallium-zinc oxide gate stack”, Paul Yang, Daehoon Park, Keonwon Beom, Hyung Jun Kim, Chi Jung Kang, and Tae-Sik Yoon*, Nanotechnology, 29, 295201 (2018).
(102) [Corresponding] “Synaptic characteristics with strong analog potentiation, depression, and short-term to long-term memory transition in a Pt/CeO2/Pt crossbar array structure”, Hyung Jun Kim, Paul Yang, Daehoon Park, Geon Won Beom, Chansun Shin, Chi Jung Kang, and Tae-Sik Yoon*, Nanotechnology, 29, 265204 (2018).
(101) “Resistive switching characteristics of manganese oxide thin film and nanoparticle assembly”, Haider Abbas, Mi Ra Park, Yawar Abbas, Quanli Hu, Tae Su Kang, Tae-Sik Yoon, Chi Jung Kang, Japanese Journal of Applied Physics, 57, 06HC03 (2018).
(100) “Facile method for the synthesis of gold nanoparticles using an ion coater”, Seung Han Lee, Hyun Kyu Jung, Tae Cheol Kim, Chang Hee Kim, Chang Hwan Shin, Tae-Sik Yoon, A-Ra Hong, Ho Seong Jang, Dong Hun Kim, Applied Surface Science, 434, 1001 (2018).
(99) “Forming-free resistive switching characteristics in tantalum oxide and manganese oxide based crossbar array structure”, Quanli Hu, Mi Ra Park, Haider Abbas, Tae Su Kang, Tae-Sik Yoon, Chi Jung Kang, Microelectronic Engineering, 190, 7 (2018).
(98) “Resistive switching characteristics of Ag/MnO/CeO2/Pt heterostructures memory devices”, Quanli Hu, Tae Su Kang, Haider Abbas, Tae Sung Lee, Nam Joo Lee, Mi Ra Park, Tae-Sik Yoon, Chi Jung Kang, Microelectronic Engineering, 189, 28 (2018).
(97) “A study on the resistance switching of Ag2Se and Ta2O5 heterojunctions using structural engineering”, Tae Sung Lee, Nam Joo Lee, Haider Abbas, Quanli Hu, Tae-Sik Yoon, Hyun Ho Lee, Ee Le Shim, and Chi Jung Kang, Nanotechnology, 29, 035202 (2018).
(96) "Resistive switching characteristics in MnO nanoparticle assembly and Ag2Se thin film devices", Quanli Hu, Tae Sung Lee, Nam Joo Lee, Tae Su Kang, Mi Ra Park, Tae-Sik Yoon, Hyun Ho Lee, and Chi Jung Kang, Journal of Nanoscience and Nanotechnology 17, 7189 (2017).
(95) "Solution processed hafnium oxide doped siloxane dielectrics for a thin film transistor with reduced graphene oxide channel on flexible substrate", Yo-Han Kim, Hunsang Jung, Kyungmin Lee, Tae-Sik Yoon, and Hyun Ho Lee, Journal of Nanoscience and Nanotechnology, 17, 7423 (2017).
(94) "Resistive switching characteristics of tantalum oxide and titanium oxide heterojunction devices", Haider Abbas, yawar Abbas, Mi Ra Park, Quanli Hu, Tae Sung Lee, Jongweon Cho, Tae-Sik Yoon, Young Jin Choi, and Chi Jung Kang, Journal of Nanoscience and Nanotechnology 17, 7150 (2017).
(93) (Corresponding) “Synaptic transistor with a reversible and analog conductance modulation using Pt/HfOx/n-IGZO memcapacitor”, Paul Yang, Hyung Jun Kim, Hong Zheng, Geon Won Beom, Jong-Sung Park, Chi Jung Kang, and Tae-Sik Yoon*, Nanotechnology 28, 225201 (2017).
(92) (Corresponding) “Artificial synaptic characteristics with strong analog memristive switching in Pt/CeO2/Pt structure”, Hyung Jun Kim, Hong Zheng, Jong-Sung Park, Dong Hun Kim, Chi Jung Kang, Jun Tae Jang, Dae Hwan Kim, and Tae-Sik Yoon*, Nanotechnology 28, 285203 (2017).
(91) (Corresponding) “Forming-free resistive switching characteristics of Ag/CeO2/Pt devices with a large memory window”, Hong Zheng, Hyung Jun Kim, Paul Yang, Jong-Sung Park, Dong Wook Kim, Hyun Ho Lee, Chi Jung Kang, and Tae-Sik Yoon*, Semiconductor Science and Technology, 32, 055006 (2017).
(90) "A memristor crossbar array of titanium oxide for non-volatile memory and neuromorphic applications", Haider Abbas, yawar Abbas, Son Ngoc Truong, Kyeong-Sik Min, Mi Ra Park, Jongweon Cho, Tae-Sik Yoon, and Chi Jung Kang, Semiconductor Science and Technology 32, 065014 (2017).
(89) “The forming-free bipolar resistive switching characteristics of Ag2Se thin film”, T. S. Lee, N. J. Lee, H. K. Lee, Y. Abbas, H. Abbas, Q. L. Hu, T. S. Yoon, C.J. Kang, Journal of Physics D. 50, 205103 (2017).
(88) “The γ-Fe2O3 Nanoparticle Assembly-Based Memristor Ratioed Logic and Its Optical Tuning”, Kyung Min Lee, Jun Tae Jang, Yoon-Jae Baek, Hara Kang, Sunwoong Choi, Sung-Jin Choi, Dong Myong Kim, Chi Jung Kang, Tae-Sik Yoon, Hyun-Sun Mo, and Dae Hwan Kim, IEEE Electron Device Letters, 37, 986 (2016).
(87) “Resistive Switching Characteristics of Ta2O5 Thin Film and Maghemite Nanoparticles Assembly hybrid Device”, Mi Ra Park, Yawar Abbas, Quanli Hu, Haider Abbas, Nam Joo Lee, Tae Sung Lee, Tae-Sik Yoon, and Chi Jung Kang, Journal of Nanoscience and Nanotechnology, 16, 10225 (2016).
(86) “Resistive Switching Characteristics of Tantalum Oxide with Different Top Electrodes”, Yawar Abbas, Mi Ra Park, Quanli Hu, Tae Sung Lee, Haider Abbas, Tae-Sik Yoon, and Chi Jung Kang, Journal of Nanoscience and Nanotechnology, 16, 10231 (2016).
(85) “Influence of Pt-Fe2O3 Core–Shell Nanoparticles on the Metal Filament Formation in Active Metal/Pt-Fe2O3 Core–Shell-Embedded ZnO/Pt Resistive Switching Memory Device”, Soo Yun Kang, Eun Ji Yoo, Young Jun Noh, Tae-Sik Yoon, Chi Jung Kang, and Young Jin Choi, Journal of Nanoscience and Nanotechnology, 16, 10294 (2016).
(84) "Electrical Charging Characteristics of Palladium Nanoparticles Synthesized on Tobacco Mosaic Virus Nanotemplate for Organic Memory Device", Yo-Han Kim, Hunsang Jung, Tae-Sik Yoon, Sukwon Yoon, Cuixian Yang, Hyunmin Yi, and Hyun Ho Lee, ECS Journal of Solid State Science and Technology, 5, Q226 (2016).
(83) "Resistive switching characteristics of a compact ZnO nanorod array grown directly on an Al doped ZnO substrate", E. J. Yoo, J. Y. Shin, T. S. Yoon, C. J. Kang, and Y. J. Choi, Journal of Physcis D: Applied Physics, 49, 295109 (2016).
(82) "Resistive switching characteristics in manganese oxide and tantalum oxide devices", Quanli Hu, Yawar Abbas, Haider Abbas, Mi Ra Park, Tae-Sik Yoon, and Chi Jung Kang, Microelectronic Engineering, 160, 49 (2016).
(81) "Resistive switching characteristics in hafnium oxide, tantalum oxide and bilayer devices", Mi Ra Park, Yawar Abbas, Haider Abbas, Quanli Hu, Tae Sung Lee, Young Jin Choi, Tae-Sik Yoon, Hyun-Ho Lee, and Chi Jung Kang, Microelectronic Engineering, 159, 190 (2016).
(80) (Corresponding) "Memcapacitive characteristics in reactive-metal (Mo, Al)/HfOx/n-Si structures through migration of oxygen by applied voltage", Paul Yang, Young Jun Noh, Yoon-Jae Baek, Hong Zheng, Chi Jung Kang, Hyun Ho Lee, and Tae-Sik Yoon*, Applied Physics Letters 108, 052108 (2016).
(79) "Resistive Switching Characteristics of Tantalum Oxide Thin Film and Titanium Oxide Nanoparticles Hybrid Structure", Mi Ra Park, Yawar Abbas, Quanli Hu, Tae-Sik Yoon, Young Jin Choi, and Chi Jung Kang, Journal of Nanoscience and Nanotechnology, 15, 8613 (2015).
(78) "Enhancement of emission lifetime of CNT emitters by coating ZnO on the CNT surface", Sang Hyun Yoon, Dae Joon Chung, Jong Lee, Kyu Chang Park, Chi Jung Kang, Tae-Sik Yoon, Ee Le Shim, and Young Jin Choi, Journal of Nanoscience and Nanotechnology, 15, 9030 (2015).
(77) "Influence of incorporated Pt-Fe2O3 core-shell nanoparticles on the resistive switching characteristics of ZnO thin film", E. J. Yoo, S. Y. Kang, E. L. Shim, T. S. Yoon, C. J. Kang, and Y. J. Choi, Journal of Nanoscience and Nanotechnology, 15, 8622 (2015).
(76) "Investigation of switching phenomenon in metal-tantalum oxide interface", Abbas Yawar, Mi Ra Park, Quanli Hu, Woo Jin Song, Tae-Sik Yoon, Young Jin Choi, and Chi Jung Kang, Journal of Nanoscience and Nanotechnology, 15, 7564 (2015).
(75) "Resistive switching characteristics of TiO2 thin films with different electrodes", Jae Hyuk Shim, Quanli Hu, Mi Ra Park, Abbas Yawar, Chi Jung Kang, Jaewan Kim, and Tae-Sik Yoon, Journal of the Korean Physical Society, 67, 936 (2015).
(74) (Corresponding) "Analog memristive and memcapacitive characteristics of Pt-Fe2O3 core-shell nanoparticles assembly on p-Si substrate", Young Jun Noh, Yoon-Jae Baek, Quanli Hu, Chi Jung Kang, Young Jin Choi, Hyun Ho Lee, and Tae-Sik Yoon*, IEEE Transactions on Nanotechnology, 14, 798 (2015).
(73) (Corresponding) "Reduced reflectivity and golden color of porous anodic aluminum oxide nanostructures filled with maghemite nanoparticles", Quanli Hu, Chi Jung Kang, Hyun Ho Lee, and Tae-Sik Yoon*, Journal of Industrial and Engineering Chemistry, 24, 293 (2015).
(72) "Resistive switching of in-situ polymerized polystyrene matrix copolymerized with alkanedienyl passivated Si nanoparticles", Minkeun Kim, Hunsang Jung, Yo-Han Kim, Chi Jung Kang, Tae-Sik Yoon, and Hyun Ho Lee, Microelectronic Engineering, 136, 26 (2015).
(71) "Resistive switching properties of manganese oxide nanoparticles with hexagonal shape", Quanli Hu, Mira Park, Yawar Abbas, Jai Soon Kim, Tae-Sik Yoon, Young Jin Choi, and Chi Jung Kang, Semiconductor Science and Technology 30, 015017 (2015).
(70) "Affinity characteristics of histone-derived peptide layer by memory charging effect using chromatin protein conjugated gold nanoparticles", Hunsang Jung, Yejin Kim, Jihee Jung, Dahye Kwon, Tae-Sik Yoon, Chi Jung Kang, Taek-Jin Kang, and Hyun Ho Lee, Science of Advanced Materials 6, 2478 (2014).
(69) "Electrical charging characteristics of Au NPs embedded by sequence specific complementary DNA hybridization in metal-pentacene-insulator-silicon device", Yejin Kim, Minkeun Kim, Hunsang Jung, Young Jin Choi, Chi Jung Kang, Tae-Sik Yoon, and Hyun Ho Lee, Biochip Journal 8, 275 (2014).
(68) "Resistive switching characteristics of ZnO nanowires", Eun Ji Yoo, Il Kwon Shin, Tae-Sik Yoon, Young Jin Choi, and Chi Jung Kang, Journal of Nanoscience and Nanotechnology 14, 9459 (2014).
(67) (Corresponding) "Hysteresis and threshold switching characteristics in thin film transistors with inserted Pt-Fe2O3 core-shell nanocrystyals", Yoon-Jae Baek, Young Jun Noh, Young Jin Choi, Chi Jung Kang, Hyun Ho Lee, and Tae-Sik Yoon*, Semiconductor Science and Technology 29, 115017 (2014).
(66) "Bipolar resistive switching behavior in Au/Pt-Fe2O3 core-shell nanoparticles assembly/Ti with 3x3 crossbar array structure", Quanli Hu, Mira Park, Jae Hyuk Shim, Tae-Sik Yoon, Young Jin Choi, and Chi Jung Kang, Microelectronic Engineering 127, 40 (2014).
(65) "Resistive switching characteristics of manganese oxide nanoparticle assembly with crossbar arrays", Quanli Hu, Jae Hyuk Shim, Yawar Abbas, Woojin Song, Tae-Sik Yoon, Young Jin Choi, and Chi Jung Kang, Journal of Nanoscience and Nanotechnology 14, 8182 (2014).
(64) (Corresponding) "Voltage-dependent resistive switching characteristics in mixed layer consisting of Fe2O3 and Pt-Fe2O3 core-shell nanoparticles", Jin-Yong Lee, Jae-Deuk Kim, Yoon-Jae Baek, Young Jin Choi, Chi Jung Kang, Hyun Ho Lee, and Tae-Sik Yoon*, Applied Physcis Letters 104, 093514 (2014).
(63) "Robust ZnO nanoparticle embedded memory device using vancomycin conjugate and itsbiorecognition for electrical charging node", Minkeun Kim, Hye-Jin Lee, Sewook Oh, Yejin Kim, Hunsang Jung, Min-Kyu Oh, Yeo Joon Yoon, Tae Hyeon Yoo, Tae-Sik Yoon, Hyun Ho Lee, Biosensors and Bioelectronics, 56, 33 (2014).
(62) "Electrical characterizations of solution-processed dielectric layer of octamethylcyclotetrasiloxane", Hunsang Jung, Minkeun Kim, Yejin Kim, Sewook Oh, Chi-Jung Kang, Tae-Sik Yoon, and Hyun Ho Lee, Microelectronic Engineering, 118, 6 (2014).
(61) (Corresponding) "Investigation of analog memristive switching of iron oxide nanoparticle assembly between Pt electrodes", Jae-Deuk Kim, Yoon-Jae Baek, Young Jin Choi, Chi Jung Kang, Hyun Ho Lee, Hyun-Mi Kim, Ki-Bum Kim, and Tae-Sik Yoon*, Journal of Applied Physics, 114, 224505 (2013).
(60) "Resistive switching characteristics of the Cr/ZnO/Cr structure", E. J. Yoo, J. H. Kim, J. H. Song, T. S. Yoon, Y. J. Choi, and C. J. Kang, Journal of Nanoscience and Nanotechnology, 13, 6395 (2013).
(59) "Organic memory device with self-assembly monolayered aptamer conjugated nanoparticles", Sewook Oh, Minkeun Kim, Yejin Kim, Hyusang Jung, Tae-Sik Yoon, Young Jin Choi, Chi Jung Kang, Myeong-Ju Moon, Yong-Yeon Jeong, In-Kyu Park, and Hyun Ho Lee, Applied Physics Letters, 103, 083702 (2013).
(58) (Corresponding) "Attachment of FePt-Fe2O3 core-shell nanoparticles on carbon nanotubes and its electrical transport characteristics", Yoon-Jae Baek, Quanli Hu, Yun-Soo Lim, Chi Jung Kang, Hyun Ho Lee, and Tae-Sik Yoon*, Physica Status Solidi (a)-applications and materials science, 210, 2622 (2013).
(57) (Corresponding) "Digital versus analog resistive switching depending on the thickness of nickel oxide nanoparticle assembly", Hyung Jun Kim, Yoon-Jae Baek, Young Jin Choi, Chi Jung Kang, Hyun Ho Lee, Hyun-Mi Kim, Ki-Bum Kim, and Tae-Sik Yoon*, RSC Advances, 3, 20978 (2013).
(56) (Corresponding) "Ananlog and bipolar resistive switching in pn junction of n-type ZnO nanowires on p-type Si substrate", Seung Chang Lee, Quanli Hu, Yoon-Jae Baek, Young Jin Choi, Chi Jung Kang, Hyun Ho Lee, and Tae-Sik Yoon*, Journal of Applied Physics, 114, 064502 (2013).
(55) (Corresponding) "Multimode threshold and bipolar resistive switching in bi-layered Pt-Fe2O3 core-shell and Fe2O3 nanoparticle assembly", Jin-Yong Lee, Yoon-Jae Baek, Quanli Hu, Young Jin Choi, Chi Jung Kang, Hyun Ho Lee, Hyun-Mi Kim, Ki-Bum Kim, and Tae-Sik Yoon*, Applied Physics Letters, 102, 122111 (2013).
(54) (Corresponding) "Morphological dependence of hydrothermally synthesized ZnO nanowires on synthesis temperature and molar concentration", Koang Ouk Choi, Sang Hyun Yoon, Won-Seok Kim, Kyu-Ha Lee, Cheol-Min Yang, Jong Hun Han, Chi Jung Kang, Young Jin Choi, and Tae-Sik Yoon*, Physica Status Solidi (A), 210, 1448 (2013).
(53) (Corresponding) "Secondary growth of CNTs on the surface of CNTs for the formation of high-density network structure", Ok Hyoung Lee, Quanli Hu, Yoon-Jae Baek, Yun-Soo Lim, and Tae-Sik Yoon*, Current Applied Physics, 13, S84 (2013).
(52) (Corresponding) "Nonvolatile nano-floating gate memory with Pt-Fe2O3 composite nanoparticles and indium gallium zinc oxide channel", Quanli Hu, Seung Chang Lee, Yoon-Jae Baek, Hyun Ho Lee, Chi Jung Kang, Hyun-Mi Kim, Ki-Bum Kim, and Tae-Sik Yoon*, Journal of Nanoparticle Research, 15, 1435 (2013).
(51) (Corresponding) "Tunable threshold resistive switching characteristics of Pt-Fe2O3 core-shell nanoparticle assembly by space charge effect", Yoon-Jae Baek, Quanli Hu, Jae Woo Yoo, Young Jin Choi, Chi Jung Kang, Hyun Ho Lee, Hyun-Mi Kim, Ki-Bum Kim, and Tae-Sik Yoon*, Nanoscale 5, 772 (2013).
(50) "Characterization of ITO etching by spontaneously evaporated fume of hydrogen chloride", Sewook Oh, Hunsang Jung, Yo-Han Kim, Minkeun Kim, Eunji Yoo, Young Jin Choi, Tae-Sik Yoon, and Hyun Ho Lee, Microelectronic Engineering, 103, 173 (2013).
(49) "In-situ optical monitoring of electrochemical copper deposition process for semiconductor interconnection technology", Sang Jeen Hong, Li Wang, Dongsun Seo, and Tae-Sik Yoon, Transactions on Electrical and Electronic Materials, 13, 78 (2102).
(48) (Corresponding) "Resistive switching characteristics of maghemite nanoparticle assembly on Al and Pt electrodes on a flexible substrate", Jae Woo Yoo, Quanli Hu, Yoon-Jae Baek, Young Jin Choi, Chi Jung Kang, Hyun Ho Lee, Do-Joong Lee, Hyun-Mi Kim, Ki-Bum Kim, and Tae-Sik Yoon*, Journal of Physics D: Applied Physics 45, 225304 (2012), [Cover paper].
(47) "Organic memory device with polyaniline nanoparticles embedded as charging elements", Yo-Han Kim, Minkeun Kim, Sewook Oh, Hunsang Jung, Yejin Kim, Tae-Sik Yoon, Yong-Sang Kim, and Hyun Ho Lee, Applied Physics Letters, 100, 166301 (2012).
(46) (Corresponding) "Reflective spectra and colors of porous anodic aluminum oxide containing silver nanoparticles by plasmonic absorption”, Quanli Hu, Hyun Ho Lee, Dae-Yong Jeong, Yong-Sang Kim, Ki-Bum Kim, Jimmy Xu, and Tae-Sik Yoon*, Journal of Nanoscience and Nanotechnology, 12, 1979 (2012).
(45) (Corresponding) “Self-Assembly of Colloidal gamma-Fe2O3 and FePt Nanoparticles on Carbon Nanotubes by Dip-Coating Process”, Quanli Hu, Il Seo, Ok Hyoung Lee, Yun Soo Lim, Yong-Sang Kim, Ju Kyung Shin, Sung-Hyeon Baeck, Hyun Ho Lee, Hyun-Mi Kim, Ki-Bum Kim, and Tae-Sik Yoon*, Journal of Nanoscience and Nanotechnology, 12, 1709 (2012).
(44) (Corresponding) "Nanocrystal floating gate memory with solution-processed indium-zinc-tin-oxide channel and colloidal silver nanocrystals", Quanli Hu, Sang-Hyub Ha, Hyun Ho Lee, and Tae-Sik Yoon*, Semiconductor Science and Technology, 26, 125021 (2011).
(43) "Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis", M.-I. Richard, A. Malachias, J.-L. Rouvi`ere, T.-S. Yoon, E. Holmstr¨om, Y.-H. Xie, V. Favre-Nicolin, V. Hol´y, K. Nordlund, G. Renaud, and T.-H. Metzger, Physical Review B 84, 075314 (2011).
(42) "Non-volatile organic memory based on CdSe nano-particle/PMMA blend as a tunneling layer", Jung-Min Kim, Dong-Hoon Lee, Jun-Ho Jeun, Tae-Sik Yoon, Hyun Ho Lee, Jong-Wook Lee, Yong-Sang Kim, Synthetic Metals 161, 1155 (2011).
(41) "Electrical Charging/Discharging Properties of Organic Memory Device using CdSe Nanoparticles/PMMA Blend as the Tunneling Layer", Jung-Min Kim, Dong-Hoon Lee, Tae-Sik Yoon, Hyun Ho Lee, Jong-Wook Lee, and Yong-Sang Kim, Electrochemical and Solid-State Letters, 14, H238 (2011).
(40) "Solution processed IZTO thin film transistor on silicon nitride dielectric layer", Bong-Jin Kim, Hyung-Jun Kim, Tae-Sik Yoon, Yong-Sang Kim, Doo-Hyoung Lee, Byung-Hwan Ryu, Yongmin Choi, and Hyun Ho Lee, Journal of Industrial and Engineering Chemistry, 17, 96 (2011).
(39) "Capacitance-voltage characteristics of metal-polymer-silicon(MPS) device with inkjet-printed Ag electrode", Bong-Jin Kim, Hyung-Jun Kim, Sung-Mok Jung, Yo-Han Kim, Sang Hyub Ha, Tae-Sik Yoon, and Hyun Ho Lee, Thin Solid Films, 519, 4319 (2011).
(38) "Chracterization of gold nanoparticle pentacene memory device with polymer dielectic layer", Hyung-Jun Kim, Sung-Mok Jung, Yo-Han Kim, Bong-Jin Kim, Sang Hyub Ha, Yong-Sang Kim, Tae-Sik Yoon, and Hyun Ho Lee, Thin Solid Films 519, 6140 (2011).
(37) "(Corresponding) Organic memory capacitor device fabricated with Ag nanoparticles", Yo-Han Kim, Sung Mok Jung, Quanli Hu, Tae-Sik Yoon*, Yong-Sang Kim, and Hyun Ho Lee*, Journal of Nanoscience and Nanotechnology 11, 6044 (2011).
(36) "Charging effect in Au nanoparticle memory device with antigen-antibody reaction", Sung Mok Jung, Hyung-Jun Kim, Bong-Jin Kim, Tae-Sik Yoon, Yong-Sang Kim, and Hyun Ho Lee, Journal of Nanoscience and Nanotechnology 11, 5698 (2011).
(35) "Memory charging effect in silicon nanoparticles of pentacene capacitor device", Yo-Han Kim, Sung Mok Jung, Tae-Sik Yoon, Yong-Sang Kim, and Hyun Ho Lee, Electrochemical and Solid-State Letters 14, H149 (2011).
(34) (Corresponding) “Resistive switching characteristics of maghemite nanoparticle assembly”, Quanli Hu, Sung Mok Jung, Hyun Ho Lee, Young Jin Choi, Ki-Bum Kim, and Tae-Sik Yoon*, Journal of Physics D: Applied Physics 44, 085403 (2011).
(33) “Electrical charging of Au nanoparticles embedded by streptavidin-biotin biomolecular binding in organic memory device”, Sung Mok Jung, Hyung-Jun Kim, Bong-Jin Kim, Yong-Sang Kim, Tae-Sik Yoon, and Hyun Ho Lee, Applied Physics Letters 97, 153302 (2010).
(32) “Effects on annealing temperature for solution-processed IZTO TFTs by nitrogen incorporation”, Bong-Jin Kim , Hyung-Jun Kim , Tae-Sik Yoon , Yong-Sang Kim, and Hyun Ho Lee, Electrochemical and Solid-State Letters 13, H419 (2010).
(31) (Corresponding) “Vertically and Laterally Self-Aligned Double Layer of Nanocrystals in Nanopatterned Dielectric Layer for Nanocrystal Floating Gate Memory Device”, Quanli Hu, Tae-Kwang Eom, Soo-Hyun Kim, Hyung-Jun Kim, Hyun Ho Lee, Yong-Sang Kim, Du Yeol Ryu, Ki-Bum Kim, and Tae-Sik Yoon*, Electrochemical and Solid-State Letters, 13, H366 (2010).
(30) “Characterization of charging effect of citrate-capped Au nanoparticle pentacene device”, Hyung-Jun Kim, Sung Mok Jung, Bong-Jin Kim, Tae-Sik Yoon, Yong-Sang Kim, Hyun Ho Lee, Journal of Industrial and Engineering Chemistry, 16, 848 (2010).
(29) (Corresponding) “Selective incorporation of colloidal nanocrystals in nanopatterned SiO2 layer for nanocrystal memory device”, Il Seo, Do-Joong Lee, Quanli Hu, Chang-Woo Kwon, Kipil Lim, Seung-Hyun Lee, Hyun-Mi Kim, Yong-Sang Kim, Hyun Ho Lee, Du Yeol Ryu, Ki-Bum Kim, and Tae-Sik Yoon*, Electrochemical and Solid-State Letters, 13, K19 (2010).
(28) (Corresponding) “Controlling dislocation positions in Silicon Germanium (SiGe) buffer layers by local oxidation”, Quanli Hu, Il Seo, Yong-Sang Kim, Hyun Ho Lee, Hyun-Mi Kim, Ki-Bum Kim, Zhenning Zhang, Ya-Hong Xie, and Tae-Sik Yoon*, Thin Solid films, 518, S217 (2010).
(27) “Use of fluorine-doped tin oxide instead of indium tin oxide in highly efficient air-fabricated inverted polymer solar cells”, Woon-Hyuk Baek, Mijung Choi, Tae-Sik Yoon, Hyun Ho Lee, and Yong-Sang Kim, Appl. Phys. Lett. 96, 133506 (2010).
(26) “Composition-dependent phase separation of P3HT:PCBM composites for high performance organic solar cells”, Woon-Hyuk Baek, Tae-Sik Yoon, Hyun Ho Lee, and Yong-Sang Kim, Organic Electronics, 11, 933 (2010).
(25) “A Nanopore Structured High Performance Toluene Gas Sensor Made by Nanoimprinting Method”, Kwang-Su Kim, Woon-Hyuk Baek, Jung-Min Kim, Tae-Sik Yoon, Hyun Ho Lee, Chi Jung Kang and Yong-Sang Kim, Sensors 10, 765 (2010).
(24) (Corresponding) “Completely filling anodic aluminum oxide with maghemite nanoparticles by dip-coating and their magnetic properties”, Il Seo, Chang-Woo Kwon, Hyun Ho Lee, Yong-Sang Kim, Ki-Bum Kim, Tae-Sik Yoon*, Electrochemical and Solid-State Letters, 12, K59 (2009).
(23) (Corresponding) “Assembly of colloidal nanoparticles into anodic aluminum oxide templates by dip-coating process”, Il Seo, Chang-Woo Kwon, Hyun Ho Lee, Yong-Sang Kim, Ki-Bum Kim, and Tae-Sik Yoon*, IEEE Transaction on Nanotechnology, 8, 707 (2009).
(22) (Corresponding) “Colloidal nanoparticle layer formation through dip-coating; Effect of solvents of colloidal solution and substrate withdrawing speed during dip-coating”, Byung Gil Jung, Seok-Hong Min, Chang-Woo Kwon, Sang-Hyun Park, Ki-Bum Kim, and Tae-Sik Yoon*, Journal of the Electrochemical Society, 156, K86 (2009).
(21) “The effect of excess surfactants on the adsorption of iron oxide nanoparticles during a dip-coating process”, Chang-Woo Kwon, Tae-Sik Yoon, Sung-Soo Yim, Sang-Hyun Park, and Ki-Bum Kim, Journal of Nanoparticle Research, 11, 831 (2009).
(20) (Corresponding) “Study of growth behaviour and microstructure of epitaxially grown self-assembled Ge quantum dots on nanometer-scale patterned SiO2/Si(001) substrates”, Tae-Sik Yoon*, Hyun-Mi Kim, Ki-Bum Kim, Du Yeol Ryu, Thomas P. Russell, Zuoming Zhao, Jian Liu, and Ya-Hong Xie, Physica Status Solidi B-Basic Solid State Physics, 246, 721 (2009).
(19) “Amperometric detection of bisphenol-A on laser fabricated capillary electrophoresis device”, Sung Mok Jung, Hyung-Jun Kim, Bong-Jin Kim, Gi-Sung Joo, Tae-Sik Yoon, Yong-Sang Kim, and Hyun Ho Lee, Biochip Journal, 3, 219 (2009).
(18) “Improvement of dynamic characteristics of polydimethylsiloxane based microvalve in microfluidic system”, Gyu-Sik Ra, Sandeep Kumar Jha, Tae-Sik Yoon, Hyun Ho Lee, and Yong-Sang Kim, Microsystem Technologies, 15, 607 (2009).
(17) “Hybrid inverted bulk heterojunction solar cells with nanoimprinted TiO2 nanopores”, Woon-Hyuk Baek, Il Seo, Tae-Sik Yoon, Hyun Ho Lee, Chong Man Yun, and Yong-Sang Kim, Solar Energy Materials and Solar Cells, 93, 1587 (2009).
(16) “Effect of P3HT:PCBM concentration in solvent on performances of organic solar cells”, Woon-Hyuk Baek, Hyun Yang, Tae-Sik Yoon, C. J. Kang, Hyun Ho Lee, and Yong-Sang Kim, Solar Energy Materials and Solar Cells, 93, 1263 (2009).
(15) “Nucleation kinetics of Ru on silicon oxide and silicon nitride surfaces deposited by atomic layer deposition”, Sung-Soo Yim, Do-Joong Lee, Ki-Su Kim, Ki-Bum Kim, Soo-Hyun Kim, and Tae-Sik Yoon, Journal of Applied Physics, 103, 113509 (2008).
(14) (Corresponding) “Microstructure Analysis of Epitaxially Grown Self-Assembled Ge Islands on Nanometer-Scale Patterned SiO2/Si Substrates by High-Resolution Transmission Electron Microscopy”, Tae-Sik Yoon*, Hyun-Mi Kim, Ki-Bum Kim, Du Yeol Ryu, Thomas P. Russell, Zuoming Zhao, Jian Liu, and Ya-Hong Xie, Journal of Applied Physics, 102, 104306 (2007).
(13) “Effect of phase of underlying W film on chemical vapor deposited-W film growth and applications to contact-plug and bit line processes for memory devices”, Soo-Hyun Kim, Jeong-Tae Kim, Nohjung Kwak, Jinwoong Kim, Tae-Sik Yoon, and Hyunchul Sohn, Journal of Vacuum Science and Technology B 25, 1574 (2007).
(12) (Corresponding) “Selective growth of Ge islands on nanometer-scale patterned SiO2/Si substrate by molecular beam epitaxy”, Tae-Sik Yoon*, Zuoming Zhao, Jian Liu, Ya-Hong Xie, Du Yeol Ryu, Thomas P. Russell, Hyun-Mi Kim, and Ki-Bum Kim, Applied Physics Letters, 89, 063107 (2006).
(11) (Corresponding) “Growth Behavior and Microstructure of Ge Self-Assembled Islands on Nanometer-Scale Patterned Si Substrate”, Tae-Sik Yoon*, Zuoming Zhao, Wen Feng, Biyun Li, Jian Liu, Ya-Hong Xie, Du Yeol Ryu, Thomas P. Russell, Hyun-Mi Kim, and Ki-Bum Kim, Journal of Crystal Growth, 290, 369 (2006).
(10) “The challenges in guided self-assembly of Ge and InAs quantum dots on Si", Z.M. Zhao, T.S. Yoon, W. Feng, B.Y. Li, J.H. Kim, J. Liu, O. Hulko, Y.H. Xie, H.M. Kim, K.B. Kim, H.J. Kim, K.L. Wang, C. Ratsch, R. Caflisch, D.Y. Ryu, and T.P. Russell, Thin Solid Film, 508, 195 (2006).
(9) “Initial stage of InAs growth on Si(001) studied by high-resolution transmission electron microscopy”, Z. M. Zhao, O. Hulko, T. S. Yoon, and Y. H. Xie, Journal of Applied Physics, 98, 123526 (2005).
(8) (Corresponding) “Surface Roughness and Dislocation Distribution in Compositionally Graded Relaxed SiGe Buffer Layer with Inserted Strained Si Layers”, Tae-Sik Yoon*, Jian Liu, Atif M. Noori, Mark. S. Goorsky, and Ya-Hong Xie, Applied Physics Letters, 87, 012104 (2005).
(7) “Effects of B2H6 pretreatment on atomic layer deposition (ALD) of W film using a sequential supply of WF6 and SiH4 as a nucleation layer for W-plug process”, Soo-Hyun Kim, Eui-Seong Hwang, Baek-Mann Kim, Joo-Wan Lee, Ho-Jung Sun, Tae Eun Hong, Jun-Ki Kim, Hyunchul Sohn, Jinwoong Kim, and Tae-Sik Yoon, Electrochemical and Solid-State Letters, 8, C155 (2005).
(6) (First author) “Single and Multiple-Step Dip-Coating Process of Maghemite (g-Fe2O3) Nanoparticles onto Si, Si3N4, and SiO2 Substrates”, Tae-Sik Yoon*, Jihun Oh, Sang-Hyun Park, Viena Kim, Ki-Bum Kim, Byung Gil Jung, Seok-Hong Min, Jongnam Park, and Taeghwan Hyeon, Advanced Functional Materials, 14, 1062 (2004).
(5) “Comparison of the Agglomeration Behavior of Au and Cu Films Sputter Deposited on Silicon Dioxide”, Jang-Yeon Kwon, Tae-Sik Yoon, Ki-Bum Kim, and Seok-Hong Min, Journal of Applied Physics, 93, 3270 (2003).
(4) (First author) “Ge-rich Si1-XGeX nanocrystal formation by the oxidation of as-deposited thin amorphous Si0.7Ge0.3 layer”, Tae-Sik Yoon* and Ki-Bum Kim, Journal of Vacuum Science and Technology B 20, 631 (2002).
(3) (First author) “Initial stage of amorphous Si and Si0.7Ge0.3 deposition on SiO2 by low-pressure chemical vapor deposition”, Tae-Sik Yoon*, Dong-Hoon Lee, Ki-Bum Kim, and Seok-Hong Min, Journal of the Electrochemical Society, 149, C301 (2002).
(2) (First author) “High spatial density nanocrystal formation using thin layer of amorphous Si0.7Ge0.3 deposited on SiO2”, Tae-Sik Yoon*, Jang-Yeon Kwon, Dong-Hoon Lee, Ki-Bum Kim, Seok-Hong Min, Dong-Hyuk Chae, Dae Hwan Kim, Jong Duk Lee, Byung-Gook Park, and Hwack Joo Lee, Journal of Applied Physics, 87, 2449(2000).
(1) “Nanocrystal memory cell using high-density Si0.73Ge0.27 quantum dot array”, Dong-Hyuk Chae, Dae Hwan Kim, Yongjae Lee, Chang-Hyun Kwak, Jong Duk Lee, Byung-Gook Park, Tae-Sik Yoon, Jang-Yeon Kwon, Ki-Bum Kim, Kyoung-Ryol Kim, Noejung Park, Hyunsik Yoon, and Seok Jae Jeong, Journal of Korean Physical Society, 35, S995 (1999).
Patents
(16) 윤태식, 전석우, 장건호, 한지민, 최명우, 배광민, 정보영, 노태윤, "3차원 인공결정립 채널층 적용 기반 멤트랜지스터 및 그 제조 방법", 출원번호: 10-2023-0144116, Oct. 25, 2023.
(15) 윤태식, 전석우, 장건호, 한지민, 최명우, 배광민, 정보영, 노태윤, "3차원 인공결정립 적용 기반 멤트랜지스터 및 그 제조 방법", 출원번호: 10-2023-0144114, Oct. 25, 2023.
(14) 윤태식, 정하영, "자가-선택형 양극 인공 시냅스 소자 및 그의 제조방법", 출원번호: 10-2022-0105046, Aug. 22, 2022.
(13) 윤태식, Dwipak Prasad Sahu, "문턱 스위칭 선택소자 및 그의 제조 방법", 출원번호: 10-2022-0050672, April 25, 2022.
(12) Tae-Sik Yoon, "Semiconductor Device with multiple floating gates for multi-level capacitance change", Application No.(US): 17/393,805, Aug. 04, 2021.; Publication No.: US-2022-0045217-A1, Feb. 10, 2022. / Patent No. US11,810,983, Nov. 07, 2023.
(11) 윤태식, "반도체소자", 출원번호: 10-2021-0099764, July. 29, 2021 / 등록번호: 10-2557969, July 17, 2023.
(10) 윤태식, 박종성, "이중게이트 구조를 이용한 시냅틱 트랜지스터 소자”, 출원번호: 10-2016-0134820, Oct. 18, 2016 / 등록번호: 10-1785949, Oct. 10, 2017.
(9) 윤태식, 박종성, 양바울, “게이트 절연층과 산화물 반도체층 사이의 이온이동을 이용한 MOS 구조 소자 및 그 제조방법", 출원번호: 10-2016-0134818, Oct. 18, 2016. / 등록번호: 10-1834507, Feb. 26, 2018.
(8) 윤태식, 양바울, "산소활성전극을 MOS 구조 멤캐패시터 소자 및 그 제조방법", 출원번호: 10-2016-0012470, Feb. 1, 2016. / 등록번호: 10-1818019, Jan. 8, 2018.
(7) 윤태식, 노영준, “아날로그 멤리스터 및 멤캐패시터 특성을 갖는 전자소자와 그 제조방법", 출원번호: 10-2016-0002969, Jan. 11, 2016. / 등록번호: 10-1803740, Nov. 27, 2017.
(6) Ya-Hong Xie and Tae-Sik Yoon, "METHOD FOR CONTROLLING DISLOCATION POSITIONS IN SILICON GERMANIUM BUFFER LAYERS", US7,186,626, Mar. 6, 2007.
(5) 김기범, 윤태식, "다중 딥코팅 방법을 이용한 양자층 및 패턴 구조 형성방법 (A METHOD OF FORMING QUANTUM LAYER AND PATTERNEDSTRUCTURE BY MULTIPLE DIP-COATING PROCESSES)", 등록번호 10-0577061, Apr. 1, 2006.
(4) Ki-Bum Kim, Tae-Sik Yoon, Jang-Yeon Kwon, "Memory of multilevel quantum dot structure and method for fabricating the same", US6,657,253, Dec. 02, 2003.
(3) Ki-Bum Kim, Tae-Sik Yoon, Jang-Yeon Kwon, "Semiconductor device having quantum dots", US6,424,004, Jul. 23, 2002.
(2) 김기범, 윤태식, 권장연, "다중층 양자점을 이용한 메모리 소자 및 제조 방법", 등록번호 10-0294691, Apr. 1, 2001.
(1) Ki-Bum Kim, Tae-Sik Yoon, Jang-Yeon Kwon, "Method for forming quantum dot in semiconductor device and a semiconductor device resulting therefrom", US6,194,237, Feb. 27, 2001.